A 0.8 GHz to 1 GHz 0.25 μm CMOS low noise amplifier for multi-standard receiver

A single-ended low noise amplifier (LNA) for a multi-standard (800 to 1000 MHz) mobile receiver that covers GSM and 3G respectively, has been designed and simulated in a 0.25 μm CMOS technology process. This LNA makes part of a larger system to cover GSM and 3G bands from 800 to 2100 MHz but this work only focuses on lower bands. The circuit topology is based on inductively degenerated common source (IDCS). Circuit simulations indicate a power gain of 12 dB, a noise figure of 0.7 dB with IIP3 and 1-dB compression point of 0.87 dBm and -2.7 dBm respectively. The current consumption for this circuit is 8.3 mA with voltage supply of 2.5V.