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Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells

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conference contribution
posted on 2024-07-12, 11:56 authored by Christopher Hall, Lap DaoLap Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, Jeffrey DavisJeffrey Davis
We reveal the dynamics of carrier-induced screening of the internal electric field in ZnO quantum wells. By controlling the potential profile of the quantum wells we demonstrate the ability to tune the excited state lifetimes.

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9781424473328

Journal title

2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), Canberra, Australian Capital Territory, Australia, 12-15 December 2010

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices COMMAD 2010, Canberra, Australian Capital Territory, Australia, 12-15 December 2010

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1 p

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IEEE

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Copyright © 2010 IEEE. The published version is reproduced in accordance with the copyright policy of the publisher. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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eng

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