Effect of dopants in the spin-on glass layer on the bandgap shift in GaAs/AlGaAs and InGaAs/AlGaAs intermixed quantum wells

Impurity free vacancy disordering (IFVD) is induced in both GaAs/AIGaAs and InGaAs/AlGaAs QWs using undoped, Ga-doped and P-doped spin-on glass encapsulant layers. IFVD has been studied for different annealing and pre-baking temperatures, using low temperature photoluminescence (PL). The P-doped and undoped silica layers behave similarly in promoting IFVD, inducing large energy shifts. The Ga-doped silica layer suppresses IFVD, which is explained by the reduction of Ga outdiffusion from the QW structure into the oxide layer.