Ion-implanted InP for ultrafast photodetector application

In order to create highly resistive InP with short carrier lifetimes, p-type epilayers at 200·C were implanted with MeV P+ ions up to doses of 1 x 10(16) cm-2•. Samples were subsequently annealed at temperatures between 400·C and 700·C for 30s. Double crystal x-ray diffraction, time resolved photoluminescence and Hall effect measurements were performed on these samples. The results of these experiments were then compared with the ones obtained from implantation into semi-insulating InP with a view to create materials suitable for ultrafast photodetector fabrication.