Measurement of optical absorption in semiconductor layer structures
conference contribution
posted on 2024-07-11, 14:41 authored by Lap Dao, M. Gal, B. H. Koo, H. Makino, T. YaoWe describe a simple method based on photoluminescence, which allowed us to determine the absorption spectra of InAs/InAIAs quantum dots at low temperatures. The method is convenient when other, more conventional absorption measurements are not feasible, and the sample emits luminescence.
History
Available versions
PDF (Published version)Publisher DOI
Publisher website
ISBN
780366980Journal title
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMADConference name
Conference on Optoelectronic and Microelectronic Materials and Devices, COMMADVolume
2000-JanuaryPagination
2 ppPublisher
IEEECopyright statement
Copyright © 2000 IEEE. The published version is reproduced in accordance with the copyright policy of the publisher. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.Language
engUsage metrics
Categories
No categories selectedKeywords
Licence
Exports
RefWorks
BibTeX
Ref. manager
Endnote
DataCite
NLM
DC