Non-equilibrium charge carriers recombination, diffusion peculiarities and bleaching in InGaAs(P) epitaxial layers
conference contribution
posted on 2024-07-11, 14:00 authored by Mindaugas Petrauskas, Saulius JuodkazisSaulius Juodkazis, Magnus Willander, Aziz QuachaThe method of picosecond laser induced grating (LIG) was used for investigation of non- equilibrium charge carriers (NCC) dynamics in the epitaxial layers of InGaAsP and InGaAs. The carriers recombination time (tau) R and diffusion coefficient Da have been determined. The influence of bleaching on the revealed values is discussed.
History
Available versions
PDF (Published version)Publisher DOI
ISSN
1996-756XJournal title
Proceedings of SPIE - The International Society for Optical EngineeringConference name
SPIE - The International Society for Optical EngineeringVolume
1985Pagination
4 ppPublisher
SPIECopyright statement
Copyright © 1993 SPIE. This paper was originally published in Proceedings of SPIE and is available from: http://doi.org/10.1117/12.162765. The published version is reproduced in accordance with the copyright policy of the publisher. One print or electronic copy may be made for personal use only. Systematic electronic or print reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content are prohibited.Language
engUsage metrics
Categories
No categories selectedKeywords
Licence
Exports
RefWorks
BibTeX
Ref. manager
Endnote
DataCite
NLM
DC