Poly-Si on glass thin-film PV research at UNSW

Thin-film polycrystalline silicon (poly-Si) on glass is a promising material for lowering the cost of PV electricity. This paper gives an update on the poly-Si on glass thin-film PV research in our group at the University of New South Wales (UNSW). Each of the investigated Si formation methods (solid phase crystallisation, solid phase epitaxy, ion-assisted deposition) is shown to be capable of producing device-grade Si material, with voltages in the 440-530 mV range. Fill factors of over 70% are now frequently obtained using an interdigitated cell metallisation scheme. The best cells presently have efficiencies of 7% and are improving rapidly.