Postgrowth wavelength tuning of optoelectronic devices by ion implantation induced quantum well intermixing
conference contribution
posted on 2024-07-11, 14:41 authored by L. Fu, H. H. Tan, C. Jagadish, Lap Dao, M. Gal, Ning Li, Wei Lu, S. C. ShenAs one of the postgrowth band gap engineering technique, proton implantation induced quantum well intermixing has been used to tune the wavelength of two different optoelectonic devices, the quantum well laser and quantum well infrared photodetector. Large wavelength shifts have been obtained for both devices after implantation and rapid thermal annealing, without significant degradation of performance.
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780366980Journal title
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMADConference name
Conference on Optoelectronic and Microelectronic Materials and Devices, COMMADVolume
2000-JanuaryPagination
3 ppPublisher
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