Proton irradiation induced intermixing in InxGa 1-xAs/InP quantum wells

We have investigated the quantum well interdiffusion of InxGa1−xAs/InP QWs with different In composition using proton irradiation. 50 KeV proton implantation with various doses from 5x1014 H/cm2 to 1x1016 H/cm2 with subsequent annealing at 750◦ for 60 sec were used to induce the atomic intermixing process. Photoluminescence was performed to measure the bandgap energy shift between the unimplanted and implanted region of the structures. Initially, the energy shift increased with increasing dose, but then saturated at the highest doses. The energy shift was also found to decrease with increased implantation temperature. Time resolved photoluminescence was performed to investigate the carrier dynamic of the quantum wells after intermixing.