Quantum well intermixing for optoelectronic device integration
conference contribution
posted on 2024-07-11, 14:40 authored by M. Buda, P. N.K. Deenapanray, L. Fu, H. H. Tan, P. Reece, Lap Dao, M. Gal, C. JagadishThis paper reviews recent results on impurity free intermixing of GaAs/AlGaAs quantum wells and application of this technique for integration of optoelectronic devices. Silicon dioxide layers created by plasma enhanced chemical vapour deposition and spin on glass layers were used in this study to create interdiffusion. An integrated device of a laser and a waveguide has been demonstrated.
History
Available versions
PDF (Published version)Publisher DOI
ISBN
780372352Journal title
2002 23rd International Conference on Microelectronics, MIEL 2002 - ProceedingsConference name
2002 23rd International Conference on Microelectronics, MIEL 2002Volume
1Pagination
4 ppPublisher
IEEECopyright statement
Copyright © 2002 IEEE. The published version is reproduced in accordance with the copyright policy of the publisher. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.Language
engUsage metrics
Categories
No categories selectedKeywords
Licence
Exports
RefWorks
BibTeX
Ref. manager
Endnote
DataCite
NLM
DC