Structural, electrical and optical properties of MeV As+ ion implanted InP
conference contribution
posted on 2024-07-11, 14:40 authored by C. Carmody, H. H. Tan, C. Jagadish, J. Zou, Lap Dao, M. GalThe structural, optical and electrical properties of MeV ion implanted InP were studied as a function of annealing temperature. At high annealing temperatures, the implanted material exhibited picosecond optical responses and sheet resistivities of the order of tens of ohms/square. DCXRD and TEM measurements revealed distinct layers of damage resulting from the implantation.
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780375718Journal title
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMADConference name
Conference on Optoelectronic and Microelectronic Materials and Devices, COMMADVolume
2002-JanuaryPagination
3 ppPublisher
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