Time-resolved and time-integrated photoluminescence study of optical properties of silicon quantum dots
conference contribution
posted on 2024-07-26, 14:57 authored by Eun-Chel Cho, Young H. Cho, Lap Dao, My T. T. Do, Martin A. Green, Peter HannafordPeter Hannaford, Yidan Huang, Xiaoming WenIn this paper we report studies of the optical properties of silicon quantum dot structures. From time-resolved and time-integrated photoluminescence measurements we investigate the state-filling effect and carrier lifetime and discuss the parabolic confinement of quantum dot structures. The photoluminescence intensities for different quantum dot levels decay with a stretched exponential function and the decay times are in the range 2 - 60 µs.
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Conference on Optoelectronics and Microelectronic Materials and Devices (COMMAD 2004), Brisbane, Australia, 8-10 December 2004Conference name
Conference on Optoelectronics and Microelectronic Materials and Devices COMMAD 2004, Brisbane, Australia, 8-10 December 2004Publisher
University of QueenslandCopyright statement
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