Time resolved and time integrated photoluminescence for study of optical properties of silicon quantum dots
conference contribution
posted on 2024-07-09, 23:46 authored by Lap Dao, Xiaoming Wen, My Thi Tra Do, Peter HannafordPeter Hannaford, Eun Chel Cho, Young H. Cho, Yidan Huang, Martin A. GreenIn this paper we report studies of the optical properties of silicon quantum dot structures. From time-resolved and time-integrated photoluminescence measurements we investigate the state-filling effect and carrier lifetime and discuss the parabolic confinement of quantum dot structures. The photoluminescence intensities for different quantum dot levels decay with a stretched exponential function and the decay times are in the range 2-60 μs.
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780388208Journal title
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMADConference name
Conference on Optoelectronic and Microelectronic Materials and Devices, COMMADPagination
2 ppPublisher
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