Ultrafast time-resolved photoluminescence measurements on InGaAs/GaAs quantum dots
conference contribution
posted on 2024-07-11, 14:40 authored by Lap Dao, M. Gal, A. Babinski, C. JagadishTime resolved photoluminescence (PL) on InGaAs/GaAs showed that the carrier dynamics is affected by two distinct factors: the capture of the photo-excited carriers into the quantum dot (QD) states and the carrier relaxation inside the dots. The ratio of these two components is a function of the excitation intensity. We also demonstrate the influence of the Auger-like scattering in the carrier relaxation process in InGaAs/GaAs quantum dots by analysing the intensity dependence of time resolved spectra.
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780366980Journal title
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMADConference name
Conference on Optoelectronic and Microelectronic Materials and Devices, COMMADVolume
2000-JanuaryPagination
3 ppPublisher
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