Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers
journal contribution
posted on 2024-07-11, 14:40 authored by L. Fu, R. W. V.d. Heijden, H. H. Tan, C. Jagadish, Lap Dao, M. GalThe effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO2 and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO2 layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD. © 2002 American Institute of Physics.
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0003-6951Journal title
Applied Physics LettersVolume
80Issue
7Pagination
2 ppPublisher
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Copyright © 2002 American Institute of Physics. The paper is reproduced in accordance with the copyright policy of the publisher.Language
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