Swinburne
Browse

Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

Download (111.58 kB)
journal contribution
posted on 2024-07-11, 14:40 authored by L. Fu, R. W. V.d. Heijden, H. H. Tan, C. Jagadish, Lap Dao, M. Gal
The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO2 and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO2 layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD. © 2002 American Institute of Physics.

History

Available versions

PDF (Published version)

ISSN

0003-6951

Journal title

Applied Physics Letters

Volume

80

Issue

7

Pagination

2 pp

Publisher

AIP Publishing

Copyright statement

Copyright © 2002 American Institute of Physics. The paper is reproduced in accordance with the copyright policy of the publisher.

Language

eng

Usage metrics

    Publications

    Categories

    No categories selected

    Keywords

    Exports

    RefWorks
    BibTeX
    Ref. manager
    Endnote
    DataCite
    NLM
    DC