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Submicrometer lithography by near-field optical microscopy

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posted on 2024-07-09, 23:16 authored by Saulius JuodkazisSaulius Juodkazis, Y. Arisawa, S. Matsuo, H. Misawa, R. Tomasiunas, J. Vaitkus
Optimization of (i) intensity of illumination and (ii) thickness of resist was made looking for the conditions when high spatial resolution could be achieved by optical near- field lithography. Standard set-up of near-field illumination through a tapered Al-coated fiber tip was employed for the exposure of positive resist OFPR-5000 (EG), which is photo-sensitive for wavelength (lambda) > 450 nm. Tip was scanned along the line at near-field conditions of constant sample-to-tip separation to produce adjustable exposure dose of the spin-coated resist film. Femtosecond, 120 fs, pulses of the power P >1 mW (at 82 MHz repetition rate) at 400 nm were coupled into a fiber (>1 m length) and delivered to the surface of the resist for illumination. The issues of NSOM fabrication using tapered Al-coated tips are addressed. To achieve a reproducible and high aspect ratio (approaching 1:1) NSOM-based lithography there should be found resists allowing to produce thin films (>100 nm) with low surface roughness (>10 nm).

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ISSN

0277-786X

Journal title

Proceedings of SPIE-The International Society for Optical Engineering

Volume

4318

Pagination

5 pp

Publisher

SPIE

Copyright statement

Copyright © 2001 Society of Photo-Optical Instrumentation Engineers. This paper was originally published in Proceedings of SPIE (Vol. 4318), and is available from: http://doi.org/10.1117/12.417618. The published version is reproduced in accordance with the copyright policy of the publisher. One print or electronic copy may be made for personal use only. Systematic electronic or print reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content are prohibited.

Language

eng

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