Domain wall dynamics and exchange bias effect in IrMn/Fe2CoSi bilayers for spintronic applications

We all are familiar with memory which are being used in mobile, laptop, computer where data (such as photos, songs, videos) are stored. This memory can be non-magnetic and magnetic, but the magnetic memory has more advantageous than non-magnetic type such as energy efficient, higher data dense and higher endurance. The basic principle of this magnetic memory is the GMR and TMR. In our thesis work our aim was to develop the GMR and TMR device using a novel material Fe2CoSi. Besides, such type of devices is also being used as a magnetic sensor applications.