Modeling of Circuit-Under-Pad Devices influenced by Back End Of Line Structures, Probing and Wire Bonding

In this project, the systematic investigation of the impact of various thermo-mechanical stresses (like stress due to Back End Of Line metal stack, probing, and wire bonding process) onto the Circuit Under Pad devices was studied in detail. The Comsol models for probing and wire bonding were developed and simulated for multiple Back End Of Line options, probe insertions, wire bond metals. The Comsol qualitative analysis used to plan the appropriate wafer-level silicon testing. The experimental results were then systematically analyzed and used to extract the dedicated Circuit Under Pad model for a polysilicon resistor. The newly extracted model was implemented into the Process Design Kit with appropriate model flags.