Numerical Modelling of Nanoscale Heat Trap Phenomena in Black Silicon via Monte Carlo Simulation

The advancement in miniaturizing semiconductor materials results application of black silicon (BSi) in solar cells becomes a captivating field to study for further enhancements. In regards of heat dissipation issues, this work proposes a transient Monte Carlo simulation for phonon transport in BSi. With the implementation of high temperature gradient between both ends of the simulation model, analysis of heat trap phenomenon within BSi would be applicable. Such information obtained would be favorable in searching of better solution for thermoelectric conversion through harvesting the trapped heat within BSi to improve photovoltaic efficiency.